158 lines
4.3 KiB
C
158 lines
4.3 KiB
C
/**
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******************************************************************************
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* @file User\Driver\flash_config.c
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* @author 路淮
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* @version v0.1
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* @date 2026-05-21
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* @brief Flash读写配置
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******************************************************************************
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*/
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#include "flash_config.h"
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#include "stm32h7xx_hal.h"
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#include "FreeRTOS.h"
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#include "task.h"
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/**
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* @brief stmflash_read_data：读取Flash数据
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* @note none
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* @param pbuf：数据缓冲区指针
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* @param addr：Flash地址
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* @param datalen：数据长度
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* @retval none
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*/
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void stmflash_read_data(uint8_t *pbuf, uint32_t addr, uint16_t datalen)
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{
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if (pbuf == NULL || datalen == 0) {
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return;
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}
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memcpy(pbuf, (const void *)addr, datalen);
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}
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/* ============================================================
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* 写 Flash
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* 函数指针原型: void (*write_flash)(uint8_t *pbuf, uint32_t addr, uint16_t datalen)
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*
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* H743 写入规则：
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* - 每次必须写 32字节 (FLASH_TYPEPROGRAM_FLASHWORD)
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* - 写入地址必须 32字节对齐
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* - 不满 32字节的部分用 0xFF 填充
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* ============================================================ */
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void stmflash_write_data(uint8_t *pbuf, uint32_t addr, uint16_t datalen)
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{
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if (pbuf == NULL || datalen == 0) {
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return;
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}
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/* 地址必须32字节对齐 */
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if ((addr % 32) != 0) {
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return;
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}
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/* 计算对齐后的长度 */
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uint16_t aligned_len = (datalen + 31) & ~31U;
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/* 构建对齐缓冲区, 多余部分填 0xFF */
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uint8_t buf[aligned_len];
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memset(buf, 0xFF, aligned_len);
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memcpy(buf, pbuf, datalen);
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HAL_FLASH_Unlock();
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uint32_t address = addr;
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uint8_t *writePtr = buf;
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uint16_t remain = aligned_len;
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while (remain >= 32)
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{
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if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD,
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address,
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(uint32_t)writePtr) != HAL_OK)
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{
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/* 写入失败，退出 */
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break;
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}
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address += 32;
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writePtr += 32;
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remain -= 32;
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}
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HAL_FLASH_Lock();
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}
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/* ============================================================
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* 擦除 Flash Sector
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* 函数指针原型: uint8_t (*erase_sector)(uint32_t addr)
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*
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* H743 参数：
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* - Bank2, Sector0 起始地址 0x08100000
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* - 每个 Sector = 128KB
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* - VoltageRange = FLASH_VOLTAGE_RANGE_3 (2.7V ~ 3.6V)
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* ============================================================ */
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uint8_t flash_sector_erase(uint32_t addr)
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{
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FLASH_EraseInitTypeDef EraseInitStruct = {0};
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uint32_t SECTORError = 0;
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/* 根据地址计算 Sector 编号 */
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/* Bank2: 0x08100000 ~ 0x081FFFFF, 共8个Sector, 每个128KB */
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uint32_t sector = (addr - 0x08100000) / (128 * 1024);
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if (sector > 7) {
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return 0;
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}
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HAL_FLASH_Unlock();
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EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
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EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
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EraseInitStruct.Banks = FLASH_BANK_2;
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EraseInitStruct.Sector = sector;
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EraseInitStruct.NbSectors = 1;
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if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
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{
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HAL_FLASH_Lock();
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return 0;
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}
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HAL_FLASH_Lock();
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return 1;
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}
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flash_manage_t stm_flash_manage = {0};
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void stm_flash_init(void)
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{
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stm_flash_manage.align_num = 32;
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stm_flash_manage.flash_write_mode = FLASH_OVERWRITING_MODE;
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stm_flash_manage.flash_read_mode = FLASH_NO_CLEAR_MODE;
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stm_flash_manage.flash_start_address = 0x08180000;
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stm_flash_manage.manage_sector_num = 1;
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stm_flash_manage.sector_size = 128 * 1024;
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stm_flash_manage.open_flash = NULL;
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stm_flash_manage.close_flash = NULL;
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stm_flash_manage.read_flash = stmflash_read_data;
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stm_flash_manage.write_flash = stmflash_write_data;
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stm_flash_manage.erase_sector = flash_sector_erase;
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// stm_flash_manage.open_flash();
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flash_manage_init(&stm_flash_manage);
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}
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int8_t stm_flash_read(uint8_t *pbuf, uint8_t frame_type)
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{
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taskENTER_CRITICAL();
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int8_t flag = flash_manage_read(&stm_flash_manage, pbuf, frame_type);
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taskEXIT_CRITICAL();
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return flag;
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}
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int8_t stm_flash_write(uint8_t *pbuf, uint16_t size, uint8_t frame_type)
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{
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taskENTER_CRITICAL();
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int8_t flag = flash_manage_write(&stm_flash_manage, pbuf, size, frame_type);
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taskEXIT_CRITICAL();
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return flag;
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}
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