BR_YKC/Core/User/Driver/flash_config.c

#include "flash_config.h"
#include "stm32h7xx_hal.h"
#include "FreeRTOS.h"
#include "task.h"

void stmflash_read_data(uint8_t *pbuf, uint32_t addr, uint16_t datalen)
{
    if (pbuf == NULL || datalen == 0) {
        return;
    }
    memcpy(pbuf, (const void *)addr, datalen);
}

/* ============================================================
 * 写 Flash
 * 函数指针原型: void (*write_flash)(uint8_t *pbuf, uint32_t addr, uint16_t datalen)
 *
 * H743 写入规则：
 *   - 每次必须写 32字节 (FLASH_TYPEPROGRAM_FLASHWORD)
 *   - 写入地址必须 32字节对齐
 *   - 不满 32字节的部分用 0xFF 填充
 * ============================================================ */
void stmflash_write_data(uint8_t *pbuf, uint32_t addr, uint16_t datalen)
{
    if (pbuf == NULL || datalen == 0) {
        return;
    }

    /* 地址必须32字节对齐 */
    if ((addr % 32) != 0) {
        return;
    }

    /* 计算对齐后的长度 */
    uint16_t aligned_len = (datalen + 31) & ~31U;

    /* 构建对齐缓冲区, 多余部分填 0xFF */
    uint8_t buf[aligned_len];
    memset(buf, 0xFF, aligned_len);
    memcpy(buf, pbuf, datalen);

    HAL_FLASH_Unlock();

    uint32_t address  = addr;
    uint8_t *writePtr = buf;
    uint16_t remain   = aligned_len;

    while (remain >= 32)
    {
        if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD,
                              address,
                              (uint32_t)writePtr) != HAL_OK)
        {
            /* 写入失败，退出 */
            break;
        }
        address  += 32;
        writePtr += 32;
        remain   -= 32;
    }

    HAL_FLASH_Lock();
}

/* ============================================================
 * 擦除 Flash Sector
 * 函数指针原型: uint8_t (*erase_sector)(uint32_t addr)
 *
 * H743 参数：
 *   - Bank2, Sector0 起始地址 0x08100000
 *   - 每个 Sector = 128KB
 *   - VoltageRange = FLASH_VOLTAGE_RANGE_3 (2.7V ~ 3.6V)
 * ============================================================ */
uint8_t flash_sector_erase(uint32_t addr)
{
    FLASH_EraseInitTypeDef EraseInitStruct = {0};
    uint32_t SECTORError = 0;

    /* 根据地址计算 Sector 编号 */
    /* Bank2: 0x08100000 ~ 0x081FFFFF, 共8个Sector, 每个128KB */
    uint32_t sector = (addr - 0x08100000) / (128 * 1024);

    if (sector > 7) {
        return 0;
    }

    HAL_FLASH_Unlock();

    EraseInitStruct.TypeErase    = FLASH_TYPEERASE_SECTORS;
    EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;
    EraseInitStruct.Banks        = FLASH_BANK_2;
    EraseInitStruct.Sector       = sector;
    EraseInitStruct.NbSectors    = 1;

    if (HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError) != HAL_OK)
    {
        HAL_FLASH_Lock();
        return 0;
    }

    HAL_FLASH_Lock();
    return 1;
}

flash_manage_t stm_flash_manage = {0};

void stm_flash_init(void)
{
    stm_flash_manage.align_num = 32;
    stm_flash_manage.flash_write_mode = FLASH_OVERWRITING_MODE;
    stm_flash_manage.flash_read_mode = FLASH_NO_CLEAR_MODE;
    stm_flash_manage.flash_start_address = 0x08180000;
    stm_flash_manage.manage_sector_num = 1;
    stm_flash_manage.sector_size = 128 * 1024;
    stm_flash_manage.open_flash = NULL;
    stm_flash_manage.close_flash = NULL;
    stm_flash_manage.read_flash = stmflash_read_data;
    stm_flash_manage.write_flash = stmflash_write_data;
    stm_flash_manage.erase_sector = flash_sector_erase;

    // stm_flash_manage.open_flash();
    flash_manage_init(&stm_flash_manage);
}

int8_t stm_flash_read(uint8_t *pbuf, uint8_t frame_type)
{
     taskENTER_CRITICAL();
    int8_t flag = flash_manage_read(&stm_flash_manage, pbuf, frame_type);
    taskEXIT_CRITICAL();
    return flag;
}

int8_t stm_flash_write(uint8_t *pbuf, uint16_t size, uint8_t frame_type)
{
    taskENTER_CRITICAL();
    int8_t flag = flash_manage_write(&stm_flash_manage, pbuf, size, frame_type);
    taskEXIT_CRITICAL();
    return flag;
}